SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1995
FZT657
FEATURES
C
*
Low saturation voltage
COMPLEMENTARY TYPE - FZT757
PARTMARKING DETAIL - FZT657
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
300
Collector-Emitter Voltage
300
V
Emitter-Base Voltage
5
V
Peak Pulse Current
1
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
IC
0.5
2
A
Ptot
W
°C
Tj:Tstg
-55 to +150
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
300
300
5
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V
V
IC=10mA*
Emitter-Base Breakdown V(BR)EBO
Voltage
IE=100µA
Collector Cut-Off Current ICBO
0.1
VCB=200V
µA
Emitter Cut-Off Current
IEBO
0.1
0.5
VEB=3V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
V
IC=100mA, IB=10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
1.0
1.0
V
V
IC=100mA, IB=10mA*
IC=100mA, VCE =5V*
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
40
50
IC=10mA, VCE =5V*
IC=100mA, VCE =5V*
Transition Frequency
fT
30
MHz
pF
IC=10mA, VCE=20V
f=20MHz
Output Capacitance
Cobo
20
VCB =20V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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