SMD Type
Transistors
FZT649
Electrical Characteristics Ta = 25
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Testconditons
Min
35
25
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
IC=100ìA
IC=10mA
IE=100ìA
V
V
VCB=30V
0.1
10
Collector Cut-Off Current
ICBO
IEBO
ìA
ìA
V
VCB=30V,Ta = 100
Emitter Cut-Off Current
0.1
VEB=4V
0.12 0.30
0.40 0.60
IC=1A, IB=100mA
IC=3A, IB=300mA
Collector-emitter saturation voltage *
VCE(sat)
Base-emitter saturation voltage *
Base-Emitter Turn-On Voltage *
VBE(sat)
VBE(on)
0.9
0.8
1.25
1.0
V
V
IC=1A, IB=100mA
IC=1A, VCE=2V
70
100
75
200
200
150
50
IC=50mA, VCE=2V*
IC=1A, VCE=2V*
300
Static Forward Current Transfer Ratio
hFE
IC=2A, VCE=2V*
15
IC=6A, VCE=2V*
Transitional frequency
Output capacitance
fT
Cobo
ton
150
240
25
MHz
pF
IC=100mA, VCE=5V f=100MHz
VCB=10V, f=1MHz
50
55
ns
Switching times
IC=500mA,VCC=10V,IB1=IB2=50mA
toff
300
ns
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
FZT649
2
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