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FZT603

型号:

FZT603

描述:

SOT223 NPN硅平面中功率达林顿晶体管[ SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ]

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

3 页

PDF大小:

125 K

SOT223 NPN SILICON PLANAR MEDIUM  
POWER DARLINGTON TRANSISTOR  
ISSUE 3 – NOVEMBER 1995  
FZT603  
FEATURES  
*
*
*
2A continuous current  
Useful hFE up to 6A  
Fast Switching  
C
E
PARTMARKING DETAIL – DEVICE TYPE IN FULL  
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
100  
80  
10  
6
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
A
Continuous Collector Current  
Power Dissipation  
IC  
2
A
Ptot  
2
W
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
V(BR)CBO  
MIN. TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
100  
240  
110  
16  
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
80  
Emitter-Base Breakdown  
Voltage  
10  
Collector Cut-Off Current  
0.01  
10  
V
CB=80V  
µA  
µA  
VCB=80V, T =100°C  
amb  
Emitter Cut-Off Current  
Collector Cut-Off Current  
IEBO  
0.1  
10  
VEB=8V  
µA  
µA  
ICES  
VCES=80V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.79  
0.80  
0.88  
0.99  
0.86  
0.88  
0.90  
1.00  
1.13  
V
V
V
V
V
IC=0.25A, IB=0.25mA*  
IC=0.4A, IB=0.4mA*  
IC=1A, IB=1mA*  
IC=2A, IB=20mA*  
IC=2A, IB=20mA  
†
† Tj=150°C  
FZT603  
ELECTRICAL CHARACTERISTICS (Continued)  
PARAMETER  
SYMBOL  
VBE(sat)  
MIN. TYP.  
1.7  
MAX. UNIT CONDITIONS.  
Base-Emitter  
Saturation Voltage  
1.95  
1.75  
100k  
V
V
IC=2A, IB=20mA*  
IC=2A, VCE=5V*  
Base-Emitter Turn-On Voltage VBE(on)  
1.5  
Static Forward  
Current Transfer Ratio  
hFE  
3k  
5k  
3k  
2k  
14k  
15k  
14k  
10k  
2k  
IC=50mA, VCE=5V*  
IC=500mA, VCE=5V*  
IC=1A, VCE=5V*  
IC=2A, VCE=5V*  
IC=5A, VCE=5V*  
IC=6A, VCE=5V*  
750  
Transition Frequency  
fT  
150  
MHz  
IC=100mA, VCE=10V  
f=20MHz  
Output Capacitance  
Output Capacitance  
Switching Times  
Cibo  
Cobo  
ton  
90  
pF  
pF  
µs  
µs  
VEB=500mV, f=1MHz  
VCB=10V, f=1MHz  
15  
0.5  
1.6  
IC=0.5A, VCE=10V  
IB1=IB2=0.5mA  
toff  
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle 2%  
Spice parameter data is available upon request for this device  
FZT603  
TYPICAL CHARACTERISTICS  
I
- Collector Current (Amps)  
I
- Collector Current (Amps)  
hFE v IC  
VCE(sat) v IC  
I
- Collector Current (Amps)  
I
- Collector Current (Amps)  
VBE(sat) v IC  
VBE(on) v IC  
Single Pulse Test  
µ
V
- Collector Voltage (Volts)  
Safe Operating Area  
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