PZT882
NPN Transistor
Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-223
Description
The PZT882 is suited for the output
stage of 2W audio, voltage regulator,
and relay driver.
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
Millimeter
REF.
REF.
Min.
Max.
7.30
3.10
0.10
10̓
A
C
D
E
I
6.70
2.90
0.02
0̓
B
J
1
2
3
4
5
8 8 2
Date Code
6.30
6.70
6.70
3.70
3.70
1.80
6.30
3.30
3.30
1.40
0.60
0.25
0.80
0.35
B
C
E
H
o
Ta=25
MAXIMUM RATINGS
ABSOLUTE
Symbol
C
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
30
5
V
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
A
IC
PD
3
2
W
Total Power Dissipation
O
C
Storage Temperature
-55~+150
Junction and
TJ,
Tstg
o
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
C
Typ.
Uni
V
t
Parameter
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
Min
40
Max
Test Conditions
IC= 100µA, IE=0
IC= 1mA, IB=0
IE= 10µA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
-
-
-
-
-
-
-
-
30
V
V
5
-
VCB= 30V
1
1
uA
uA
Emitter-Base Cutoff Current
-
IEBO
VEB=
3V
-
Collector Saturation Voltage
Base Saturation Voltage
*VCE(sat)
*VBE(sat)
-
-
IC=2A,IB=0.2A
V
V
0.5
2
-
30
100
-
IC=2A,IB=0.2 A
-
*hFE1
*hFE2
-
VCE= 2V, IC=20mA
VCE= 2V, IC=1 A
VCE= 5V, IC= 0.1A
DC Current Gain
-
500
Gain-Bandwidth Product
Output Capacitance
90
45
-
-
fT
MH
pF
z
, f=100MHz
-
Cob
VCB= 10V, f=1MHz,IE=0
Classification of hFE
E
Rank
Q
P
100~200
160~320
Range
250~500
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
