PZTA14
NPN Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZTA14 is darlington amplifier
transistor designed for applications
requiring extremely high current gain.
Millimeter
Millimeter
Min. Max.
13̓TYP.
REF.
REF.
Min.
Max.
7.30
3.10
0.10
10̓
A
C
D
E
I
6.70
2.90
0.02
0̓
B
J
A 1 4
2.30 REF.
Date Code
1
2
3
4
5
6.30
6.70
6.70
3.70
3.70
1.80
6.30
3.30
3.30
1.40
B
C
E
0.60
0.25
0.80
0.35
H
o
Ta=25
MAXIMUM RATINGS
ABSOLUTE
Symbol
C
Parameter
Value
Units
VCBO
Collector-Base Voltage
30
30
10
V
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
mA
300
2
W
Total Power Dissipation
PD
O
C
Storage Temperature
-55~+150
Junction and
TJ,
Tstg
o
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
C
Typ.
Uni
V
t
Parameter
Symbol
BVCBO
BVCEO
BVEBO
Min
30
30
10
-
Max
Test Conditions
IC= 100µA
IC= 1mA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
-
-
-
-
-
-
V
IE= 10µA
V
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
-
-
ICBO
IEBO
nA
VCB=30V
100
100
1.5
-
nA
V
VEB=10V
-
-
-
Collector Saturation Voltage
Base Satruation Voltage
VCE(sat)
VBE(on)
hFE1
IC=100mA,IB=0.1mA
VCE= 5V, IC=100mA
VCE= 5V, IC=10mA
-
2
-
-
V
-
10K
20K
125
DC Current Gain
-
-
hFE2
VCE= 5V, IC=100mA
Gain-Bandwidth Product
-
MH
VCE= 5V, IC= 10mA,f=100MHz
z
fT
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
Page 1 of 2
01-Jun-2002 Rev. A
