SEMICONDUCTOR
PZTA42
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
A
TELEPHONE APPLICATION.
H
L
2
FEATURES
Complementary to PZTA92.
K
E
B
1
3
J
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
G
F
F
SYMBOL RATING
UNIT
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
300
300
DIM
A
B
MILLIMETERS
1
2
3
_
6.5+0.2
V
C
_
3.5+0.2
C
1.8 MAX
5.0
V
D
D
E
0.7+0.15/-0.1
_
+
7
0.3
500
mA
mA
W
F
2.3 TYP
G
H
J
0.26+0.09/-0.02
IE
1. BASE
Emitter Current
-500
1
3.0+0.15/-0.1
2. COLLECTOR (HEAT SINK)
3. EMITTER
_
1.75+0.25
PC *
Tj
Collector Power Dissipation
Junction Temperature
Storage Temperature
K
L
0.1 MAX
10 MAX
150
Tstg
-55 150
SOT-223
* Package Mounted On FR-4 PCB 36 18 1.5mm. :
mountina pad for the collector lead min.6cm2
Marking
Type Name
PZTA42
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
SYMBOL
V(BR)CBO
V(BE)CEO
TEST CONDITION
IC=100 A, IE=0
MIN.
TYP.
MAX.
UNIT
V
300
300
40
40
40
-
-
-
-
-
-
-
-
-
-
-
-
IC=1.0mA, IB=0
V
IC=1.0mA, VCE=10V
IC=10mA, VCE=10V
IC=30mA, VCE=10V
IC=20mA, IB=2.0mA
IC=20mA, IB=2.0mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0, f=1MHz
-
* hFE
DC Current Gain
-
-
VCE(sat)
VBE(sat)
fT
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
0.5
0.9
-
V
V
-
50
-
MHz
pF
Cob
Collector Output Capacitance
3.0
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
2004. 05. 21
Revision No : 0
1/2
