PZTA44
300mA, 400V
Elektronische Bauelemente
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
SOT-223
C
ꢂ ꢁ ꢃ ꢃ f ꢃ ꢁ ꢄ ꢃ
5ꢃꢁꢄꢆ
5ꢃꢁꢄꢆ
FEATURES
E
C
. RoHS Compliant Product
ꢇ ꢁ ꢂ ꢃ
ꢃꢁꢇꢆ
. Low Current
B
ꢀꢁꢂꢃ0D[ꢁ
ICM : 300 mA (Max.)
ꢃ ꢁ ꢈ ꢄ
ꢄꢇefꢄe
ꢄꢇefꢄe
ꢀ ꢁ ꢂ ꢃ f ꢃ ꢁ ꢄ ꢃ
. High Voltage
VCEO : 400 V
1.
2.
3.
BASE
COLLECTOR
EMITTER
ꢀefꢂe
1
2
3
MAXIMUM RATINGS ( TA = 25к unless otherwise noted )
TYPE NUMBER
SYMBOL
VCBO
VCEO
VEBO
VALUE
500
400
6
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
Collector Current-Continuous
Transition Frequency
IC
300
1000
mA
mW
к
PC
Junction and Storage Temperature
TJ, TSTG
-55 ~ +150
ƔELECTRICAL CHARACTERISTICS ( Tamb = 25к unless otherwise specified )
TYPE NUMBER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
TEST CONDITIONS
MIN.
500
400
6
TYP.
MAX.
UNIT
IC = 100 μA, IE = 0
V
V
IC = 1 mA, IB = 0
IE = 100 μA, IC = 0
V
VCB = 400 V, IE = 0
0.1
0.1
μA
μA
Emitter Cut-Off Current
IEBO
VEB = 4 V, IC = 0
hFE(1)
VCE = 10 V, IC = 1 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 50 mA
VCE = 10 V, IC = 100 mA
IC = 1 mA, IB = 0.1 mA
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
IC = 10 mA, IB = 1 mA
VCE = 10 V, IC = 10 mA, f = 100 MHZ
VCB = 20 V, IE = 0, f = 1MHZ
VEB = 0.5 V, IC = 0, f = 1MHZ
40
50
45
40
hFE(2)
300
DC Current Gain
hFE(3)
hFE(4)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
fT
0.4
0.5
V
V
Collector-Emitter Saturation Voltage
0.75
0.85
V
Base-Emitter Saturation Voltage
Transition Frequency
V
20
MHZ
pF
pF
Collector Capacitance
Emitter Capacitance
Cc
7
Ce
180
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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