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DXT651

型号：

DXT651

描述：

低VCE （ SAT） NPN表面贴装晶体管[ LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR ]

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

4 页

PDF大小：

141 K

下载PDF手册
DXT651  
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
Complementary PNP Type Available (DXT751)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
TOR  
LLEC  
CO  
2,4  
3 E  
2 C  
1 B  
Mechanical Data  
•
Case: SOT89-3L  
C 4  
1
ASE  
•
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
B
3
•
•
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
EMITTER  
EW  
VI  
TOP  
Schematic and Pin Configuration  
•
•
•
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.072 grams (approximate)  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
V
V
A
80  
60  
5
Collector Current  
3
Peak Pulse Collector Current  
6
A
ICM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
125  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C  
Operating and Storage Temperature Range  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS31184 Rev. 3 - 2  
1 of 4  
www.diodes.com  
DXT651  
© Diodes Incorporated  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
IC = 100μA, IE = 0  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
80  
60  
5
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
⎯
⎯
⎯
⎯
⎯
⎯
IC = 10mA, IB = 0  
IE = 100μA, IC = 0  
0.1  
10  
VCB = 60V, IE = 0  
VCB = 60V, IE = 0, TA = 100°C  
VEB = 4V, IC = 0  
Collector-Base Cutoff Current  
ICBO  
IEBO  
⎯
⎯
⎯
⎯
μA  
μA  
Emitter-Base Cutoff Current  
0.1  
ON CHARACTERISTICS (Note 4)  
0.08  
0.23  
0.3  
0.6  
V
V
IC = 1A, IB = 100mA  
IC = 3A, IB = 300mA  
IC = 1A, IB = 100mA  
VCE = 2V, IC = 1A  
Collector-Emitter Saturation Voltage  
VCE(SAT)  
⎯
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
0.85  
0.8  
1.25  
1
V
V
VBE(SAT)  
VBE(ON)  
⎯
⎯
VCE = 2V, IC = 50mA  
⎯
300  
⎯
70  
100  
80  
200  
200  
185  
120  
V
CE = 2V, IC = 500mA  
VCE = 2V, IC = 1A  
CE = 2V, IC = 2A  
DC Current Gain  
hFE  
⎯
40  
⎯
V
AC CHARACTERISTICS  
Transition Frequency  
Output Capacitance  
140  
200  
MHz  
pF  
fT  
Cobo  
ton  
⎯
30  
VCE = 5V, IC = 100mA, f = 100MHz  
VCB = 10V, f = 1MHz  
⎯
⎯
⎯
⎯
35  
230  
ns  
ns  
V
CC = 10V. IC = 500mA,  
⎯
⎯
Switching Times  
toff  
IB1 = IB2 = 50mA  
Notes:  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.  
2.0  
1.8  
1.2  
1.0  
0.8  
I
I
= 10mA  
= 8mA  
B
B
1.6  
1.4  
1.2  
I
I
= 6mA  
= 4mA  
B
B
0.6  
0.4  
1.0  
0.8  
0.6  
0.4  
I
= 2mA  
0.2  
0
B
0.2  
0.0  
0
1
2
3
VCE, COLLECTOR EMITTER VOLTAGE (V)  
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage  
4
5
25  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)  
50  
75  
100 125  
150 175  
0
DS31184 Rev. 3 - 2  
2 of 4  
www.diodes.com  
DXT651  
© Diodes Incorporated  
0.35  
0.3  
350  
300  
V
= 2V  
CE  
T
T
= 150°C  
= 85°C  
I
/I = 10  
A
C B  
0.25  
0.2  
250  
200  
150  
100  
A
T
= 25°C  
A
0.15  
0.1  
0.05  
0
T
= 150°C  
A
T
= -55°C  
A
T
= 85°C  
A
T
= 25°C  
A
50  
0
T
= -55°C  
A
0.001  
0.01  
0.1  
1
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
IC, COLLECTOR CURRENT (A)  
IC, COLLECTOR CURRENT (A)  
Fig. 4 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
Fig. 3 Typical DC Current Gain  
vs. Collector Current  
1.2  
1.0  
1.2  
V
= 2V  
CE  
I
/I = 10  
B
C
1.0  
0.8  
0.6  
0.8  
0.6  
0.4  
T
= -55°C  
= 25°C  
A
T
= -55°C  
A
T
A
T
= 25°C  
= 85°C  
A
0.4  
T
= 85°C  
A
T
A
T
= 150°C  
0.2  
0
0.2  
T
= 150°C  
A
A
0.0  
0.0001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
IC, COLLECTOR CURRENT (A)  
IC, COLLECTOR CURRENT (A)  
Fig. 6 Typical Base-Emitter Saturation Voltage  
vs. Collector Current  
Fig. 5 Typical Base-Emitter Turn-On Voltage  
vs. Collector Current  
250  
200  
60  
50  
f = 1MHz  
40  
30  
20  
150  
100  
50  
0
V
= 5V  
CE  
f = 100MHz  
10  
0
0
5
10  
VR, REVERSE VOLTAGE (V)  
Fig. 7 Typical Output Capacitance Characteristics  
15  
20  
25  
30  
35 40  
0
20  
IC, COLLECTOR CURRENT (mA)  
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current  
40  
60  
80  
100  
DS31184 Rev. 3 - 2  
3 of 4  
www.diodes.com  
DXT651  
© Diodes Incorporated  
Ordering Information (Note 5)  
Device  
Packaging  
Shipping  
DXT651-13  
SOT89-3L  
2500/Tape & Reel  
Notes:  
5. For packaging details, go to our website at http://www.diodes.com/ap02007.pdf.  
Marking Information  
(Top View)  
KN2 = Product Type Marking Code  
= Manufacturer’s Marking Code  
YWW = Date Code Marking  
Y = Last digit of year ex: 7 = 2007  
WW = Week code 01 - 52  
YWW  
KN2  
Package Outline Dimensions  
SOT89-3L  
D1  
C
Dim  
A
Min Max Typ  
1.40 1.60 1.50  
0.45 0.55 0.50  
0.37 0.47 0.42  
0.35 0.43 0.38  
4.40 4.60 4.50  
1.50 1.70 1.60  
2.40 2.60 2.50  
B
E
B1  
C
H
D
L
B
D1  
E
e
B1  
e
—
—
1.50  
H
3.95 4.25 4.10  
0.90 1.20 1.05  
A
L
All Dimensions in mm  
D
Suggested Pad Layout  
1.7  
2.7  
0.4  
1.9  
1.3  
0.9  
3.0  
Unit: mm  
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
DS31184 Rev. 3 - 2  
4 of 4  
www.diodes.com  
DXT651  
© Diodes Incorporated  
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