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DXT3906

型号：

DXT3906

描述：

PNP表面贴装晶体管[ PNP SURFACE MOUNT TRANSISTOR ]

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

4 页

PDF大小：

180 K

下载PDF手册
DXT3906  
PNP SURFACE MOUNT TRANSISTOR  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
Complementary NPN Type Available (DXT3904)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
Mechanical Data  
•
•
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking & Type Code Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.072 grams (approximate)  
TOR  
LLEC  
2,4  
CO  
3 E  
2 C  
1 B  
•
•
C 4  
T
1
ASE  
B
•
•
•
3
EMITTER  
EW  
VI  
OP  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-40  
Unit  
V
Collector-Emitter Voltage  
-40  
V
Emitter-Base Voltage  
-5.0  
-200  
V
Collector Current – Continuous  
mA  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
125  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C  
Operating and Storage Temperature Range  
JA  
-55 to +150  
Tj, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS31140 Rev. 4 - 2  
1 of 4  
www.diodes.com  
DXT3906  
© Diodes Incorporated  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Symbol  
Min  
Max  
Unit  
Test Condition  
C = -10μA, IE = 0  
-40  
-40  
-5.0  
⎯
⎯
⎯
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICEX  
⎯
⎯
⎯
-50  
-50  
-50  
I
I
I
C = -1.0mA, IB = 0  
V
E = -10μA, IC = 0  
nA  
nA  
nA  
V
V
V
CE = -30V, VEB(OFF) = -3.0V  
CB = -30V, IE = 0  
Collector Cutoff Current  
ICBO  
Base Cutoff Current  
IBL  
CE = -30V, VEB(OFF) = -3.0V  
ON CHARACTERISTICS (Note 4)  
IC = -100μA, VCE = -1.0V  
IC = -1.0mA, VCE = -1.0V  
⎯
⎯
60  
80  
100  
60  
DC Current Gain  
300  
hFE  
⎯
I
C = -10mA, VCE = -1.0V  
IC = -50mA, VCE = -1.0V  
C = -100mA, VCE = -1.0V  
⎯
⎯
30  
I
-0.25  
-0.40  
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
IC = -10mA, IB = -1.0mA  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
V
VCE(SAT)  
VBE(SAT)  
⎯
-0.65  
⎯
-0.85  
-0.95  
I
C = -50mA, IB = -5.0mA  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
4.5  
10  
pF  
pF  
Cobo  
Cibo  
hie  
⎯
⎯
VCB = -5.0V, f = 1.0MHz, IE = 0  
Input Capacitance  
VEB = -0.5V, f = 1.0MHz, IC = 0  
Input Impedance  
2.0  
0.1  
100  
3.0  
250  
12  
kΩ  
Voltage Feedback Ratio  
Small Signal Current Gain  
Output Admittance  
10  
x 10-4  
⎯
hre  
hfe  
VCE = -10V, IC = -1.0mA, f = 1.0kHz  
400  
60  
hoe  
fT  
μS  
MHz  
Current Gain-Bandwidth Product  
⎯
V
V
CE = -20V, IC = -10mA, f = 100MHz  
CE = -5.0V, IC = -100μA,  
Noise Figure  
NF  
4.0  
dB  
⎯
RS = 1.0kΩ, f = 1.0kHz  
SWITCHING CHARACTERISTICS  
Delay Time  
35  
35  
ns  
ns  
ns  
ns  
td  
tr  
⎯
⎯
⎯
⎯
VCC = -3.0V, IC = -10mA,  
VBE(off) = 0.5V, IB1 = -1.0mA  
Rise Time  
Storage Time  
225  
75  
ts  
tf  
VCC = -3.0V, IC = -10mA,  
I
B1 = IB2 = -1.0mA  
Fall Time  
Notes:  
4. Measured under pulsed condition. Pulse width = 300μs. Duty cycle ≤2%.  
1.2  
1.0  
0.8  
0.35  
I
= -10mA  
= -8mA  
= -6mA  
B
I
0.30  
0.25  
B
I
B
I
= -4mA  
= -2mA  
B
0.20  
0.15  
0.6  
0.4  
I
B
0.10  
0.2  
0
0.05  
0.00  
25  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)  
50  
75  
100 125  
150 175  
0
-VCE, COLLECTOR-EMITTER VOLTAGE (V)  
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage  
DS31140 Rev. 4 - 2  
2 of 4  
www.diodes.com  
DXT3906  
© Diodes Incorporated  
0.4  
0.3  
V
= -1V  
CE  
I
/I = 10  
B
C
T
T
= 150°C  
= 85°C  
A
A
0.2  
0.1  
T
= 25°C  
A
A
T
= 150°C  
A
T
= 85°C  
A
T
= -55°C  
T
= 25°C  
A
T
= -55°C  
A
0
0.0001  
0.001  
0.01  
0.1  
1
-IC, COLLECTOR CURRENT (A)  
-IC, COLLECTOR CURRENT (A)  
Fig. 4 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
Fig. 3 Typical DC Current Gain  
vs. Collector Current  
V
= -1V  
CE  
I
/I = 10  
B
C
T
= -55°C  
= 25°C  
T
= -55°C  
= 25°C  
A
A
T
T
A
A
T
= 85°C  
A
T
= 85°C  
A
T
= 150°C  
A
T
= 150°C  
A
0.0001  
0.001  
0.01  
0.1  
1
-IC, COLLECTOR CURRENT (A)  
-IC, COLLECTOR CURRENT (A)  
Fig. 5 Typical Base-Emitter Turn-On Voltage  
vs. Collector Current  
Fig. 6 Typical Base-Emitter Saturation Voltage  
vs. Collector Current  
100  
10  
1
550  
500  
450  
400  
f = 1MHz  
C
ibo  
V
= -20V  
CE  
350  
300  
f = 100MHz  
C
obo  
0.01  
0.1  
1
10  
100  
-IC, COLLECTOR CURRENT (mA)  
VR, REVERSE VOLTAGE (V)  
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current  
Fig. 7 Typical Capacitance Characteristics  
DS31140 Rev. 4 - 2  
3 of 4  
www.diodes.com  
DXT3906  
© Diodes Incorporated  
Ordering Information (Note 5)  
Packaging  
Shipping  
Device  
SOT89-3L  
2500/Tape & Reel  
DXT3906-13  
Notes:  
5. For packaging details, go to our website at http://www.diodes.com/ap02007.pdf.  
Marking Information  
(Top View)  
K3N = Product Type Marking Code  
= Manufacturer’s Marking Code  
YWW = Date Code Marking  
Y = Last digit of year ex: 7 = 2007  
WW = Week code 01 - 52  
YWW  
K3N  
Package Outline Dimensions  
SOT89-3L  
Dim Min Max Typ  
D1  
C
A
B
1.40 1.60 1.50  
0.45 0.55 0.50  
0.37 0.47 0.42  
0.35 0.43 0.38  
4.40 4.60 4.50  
1.50 1.70 1.60  
2.40 2.60 2.50  
E
H
B1  
C
L
D
B
D1  
E
e
B1  
e
—
—
1.50  
A
H
3.95 4.25 4.10  
0.90 1.20 1.05  
L
D
All Dimensions in mm  
Suggested Pad Layout  
1.7  
2.7  
0.4  
1.9  
1.3  
0.9  
3.0  
Unit: mm  
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
DS31140 Rev. 4 - 2  
4 of 4  
www.diodes.com  
DXT3906  
© Diodes Incorporated  
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