PXT290A7
TRANSISTOR(PNP)
SOT-89-3L
FEATURES
1. BASE
z
z
z
Switching and Linear Amplification
High Current and Low Voltage
Complement to PXT2222A
2. COLLECTOR
3. EMITTER
MARKING:p2F
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Collector-Base Voltage
Value
Unit
VCBO
VCEO
VEBO
IC
-60
-60
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
-5
V
Collector Current
-600
500
mA
mW
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
RθJA
Tj
250
℃/W
℃
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-1mA,IE=0
-60
-60
-5
IC=-10mA,IB=0
V
IE=-1mA,IC=0
V
VCB=-50V,IE=0
-0.01
-0.01
µA
µA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
VCE=-10V, IC=-0.1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
75
100
100
100
50
DC current gain
hFE
300
-1.6
-0.4
-2.6
-1.3
12
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
V
VBE(sat)
V
Delay time
td
tr
ns
ns
ns
ns
MHz
VCC=-30V, IC=-150mA,
IB1=- IB2=-15mA
Rise time
30
Storage time
Fall time
ts
tf
300
65
Transition frequency
fT
VCE=-10V,IC=-20mA, f=100MHz
200
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
