PXT3906
TRANSISTOR(PNP)
SOT-89
FEATURES
z
z
z
Compliment to PXT3904
Low current
1. BASE
1
2. COLLECTOR
3. EMITTER
Low voltage
2
MARKING: 2A
3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-40
V
-6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-0.2
0.5
A
PC
W
℃
℃
TJ
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
-40
-40
-6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-10μA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-10μA,IC=0
V
V
ICBO
IEBO
VCB=-30V,IE=0
VEB=-6V,IC=0
-0.05
-0.05
μA
μA
cut-off current
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-50mA
VCE=-1V,IC=-100mA
60
80
DC current gain
100
60
300
30
VCE(sat)1 IC=-10mA,IB=-1mA
VCE(sat)2 IC=-50mA,IB=-5mA
VBE(sat)1 IC=-10mA,IB=-1mA
VBE(sat)2 IC=-50mA,IB=-5mA
-0.25
-0.4
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
-0.65
250
-0.85
-0.95
V
V
Transition frequency
Collector capacitance
Emitter capacitance
fT
VCE=-20V,IC=-10mA,f=100MHz
MHz
pF
pF
Cc
Ce
VCB=-5V,IE=0,f=1MHz
VEB=-0.5V,IC=0,f=1MHz
VCE=-5V,Ic=-0.1mA,f=10Hz-15.7kHz,
RS=1KΩ
4.5
10
Noise figure
NF
4
dB
Delay time
Rise time
Storage time
Fall time
td
tr
35
35
nS
nS
nS
nS
IC=-10mA , IB1=-IB2= -1mA
tS
tf
225
75
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
