CZD5706
5 A, 80 V
NPN Epitaxial Silicon Transistor
Elektronische Bauelemente
D-Pack (TO-252)
DESCRIPTION
The CZD5706 is designed for high current switching application.
FEATURES
♦
Large Current Capacitance
♦
♦
♦
Low Collector to Emitter Saturation Voltage
High-Speed Switching
High Allowable Power Dissipation
A
B
C
D
MARKING
Collector
2
G E
5706
ꢀꢀꢀꢀ
Date Code
1
Base
K
J
H F
N
O
P
1
3
M
C
B
E
Emitter
SWITCHING TIME TEST CIRCUIT
Millimeter
Millimeter
REF.
REF.
Min.
Max.
6.80
5.50
2.40
0.60
7.35
3.00
5.80
1.20
Min.
Max.
A
B
C
D
E
F
6.35
5.20
2.20
0.40
6.40
2.20
5.40
0.60
J
K
L
M
N
O
P
2.30 TYP.
0.70
0.90
0.70
1.00
1.78
1.27
0.58
0.50
0.60
1.40
0.00
0.43
G
H
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
RATING
UNIT
V
V
V
V
80
80
50
6
5
A
Collector Current(Pulse)
Base Current
Total Power Dissipation (TA=25°C)
Total Power Dissipation (TC=25°C)
Junction, Storage Temperature
ICP
IB
P D
P D
7.5
1.2
0.8
A
A
W
W
°C
15
TJ, TSTG
150, -55~150
ElECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
SYMBOL
BVCBO
BVCES
BVCEO
BVEBO
ICBO
MIN.
TYP.
MAX.
UNIT
V
V
V
V
µA
µA
mV
mV
V
TEST CONDITIONS
IC=10µA, IE=0
IC=100µA, RBE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
VCB=40V, IE=0
80
-
-
80
50
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
1
135
240
1.2
Emitter Cut-Off Current
IEBO
VEB=4V, IC=0
IC=1A, IB=50mA
VCE(sat)1
VCE(sat)2
VBE(sat)
hFE
fT
COB
TON
TSTG
TF
Collector-Emitter Saturation Voltage
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
See specified test circuit.
See specified test circuit.
See specified test circuit.
Base-Emitter Voltage, On
DC Current Gain
Transition Frequency
Output Capacitance
Turn-On Time
200
560
-
-
-
-
-
400
15
35
300
20
-
-
-
-
-
MHz
pF
nS
nS
nS
Storage Time
Fall Time
01-June-2009 Rev. A
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