CYT7090LD
SURFACE MOUNT
DUAL, ISOLATED
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT7090LD
consists of two (2) isolated Low V
LOW V
PNP
CE(SAT)
SILICON POWER TRANSISTORS
PNP Power
CE(SAT)
Transistors packaged in an epoxy molded SOT-228
surface mount case.
MARKING: FULL PART NUMBER
SOT-228 CASE
APPLICATIONS:
• DC/DC Converters (low and medium power)
FEATURES:
• Low Saturation Voltage, 750mV MAX @ I =2.0A
C
• Power Management
• Supply Line Switching
• High Current, I =3.0A
C
• Efficient Dual Device Package
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
Collector-Base Voltage
V
V
V
50
40
V
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
5.0
V
Continuous Collector Current
Peak Collector Current
I
3.0
A
C
I
5.0
A
CM
Power Dissipation
P
2.0
W
D
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
°C/W
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
100
10
UNITS
nA
µA
nA
V
I
I
I
V
V
V
=30V
CBO
CBO
EBO
CB
CB
EB
=30V, T =100°C
A
=4.0V
100
BV
BV
BV
I =100µA
50
40
CBO
CEO
C
I =10mA
V
C
I =100µA
5.0
V
EBO
E
V
V
V
V
I =500mA, I =5.0mA
100
175
250
0.8
250
450
750
1.0
mV
mV
mV
V
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
FE
C
B
I =1.0A, I =10mA
C
B
I =2.0A, I =50mA
C
B
I =1.0A, I =10mA
C
B
h
h
h
h
V
=2.0V, I =10mA
300
250
200
150
100
800
CE
CE
CE
CE
CE
C
V
V
V
V
=2.0V, I =500mA
C
=2.0V, I =1.0A
FE
FE
C
=2.0V, I =2.0A
FE
C
f
=5.0V, I =50mA, f=50MHz
MHz
T
C
R1 (23-February 2010)
