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RYU002N05

型号:

RYU002N05

描述:

0.9V驱动N沟道MOSFET[ 0.9V Drive Nch MOSFET ]

品牌:

ROHM[ ROHM ]

页数:

6 页

PDF大小:

964 K

Data Sheet  
0.9V Drive Nch MOSFET  
RYU002N05  
Structure  
Dimensions (Unit : mm)  
Silicon N-channel MOSFET  
Features  
1) High speed switing.  
2) Small package(UMT3).  
3)Ultra low voltage drive(0.9V drive).  
(2)  
(1)  
Abbreviated symbol : QJ  
Application  
Switching  
Packaging specifications  
Inner circuit  
(3)  
Package  
Taping  
T306  
3000  
Type  
Code  
Basic ordering unit (pieces)  
RYU002N05  
Absolute maximum ratings (Ta = 25C)  
Parameter  
(2)  
(1)  
(1) SOURCE  
(2) GATE  
(3) DRAIN  
Symbol  
VDSS  
VGSS  
ID  
Limits  
50  
Unit  
V
Drain-source voltage  
Gate-source voltage  
8  
V
Continuous  
200  
800  
150  
mA  
mA  
mA  
mA  
mW  
C  
Drain current  
Pulsed  
*1  
IDP  
IS  
Continuous  
Pulsed  
Source current  
(Body Diode)  
*1  
*2  
ISP  
800  
Power dissipation  
PD  
200  
Channel temperature  
Tch  
Tstg  
150  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
55 to 150  
C  
*2 Each terminal mounted on a recommended land.  
Thermal resistance  
Parameter  
Symbol  
Rth (ch-a)*  
Limits  
625  
Unit  
Channel to Ambient  
C / W  
* Each terminal mounted on a recommended land.  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.04 - Rev.A  
1/5  
Data Sheet  
RYU002N05  
Electrical characteristics (Ta = 25C)  
Parameter  
Symbol  
IGSS  
Min.  
Typ.  
-
Max.  
Unit  
A VGS=8V, VDS=0V  
ID=1mA, VGS=0V  
A VDS=50V, VGS=0V  
Conditions  
Gate-source leakage  
-
10  
Drain-source breakdown voltage V (BR)DSS  
50  
-
-
1
V
Zero gate voltage drain current  
Gate threshold voltage  
IDSS  
-
-
VGS (th)  
0.3  
-
0.8  
2.2  
2.4  
2.8  
3.3  
9.0  
-
V
S
VDS=10V, ID=1mA  
-
1.6  
1.7  
2.0  
2.2  
3.0  
-
ID=200mA, VGS=4.5V  
ID=200mA, VGS=2.5V  
ID=200mA, VGS=1.5V  
ID=100mA, VGS=1.2V  
ID=10mA, VGS=0.9V  
ID=200mA, VDS=10V  
-
Static drain-source on-state  
resistance  
*
RDS (on)  
-
-
-
*
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
l Yfs l  
Ciss  
0.2  
-
-
-
-
-
-
-
26  
6
-
pF VDS=10V  
Coss  
Crss  
-
pF VGS=0V  
3
-
pF f=1MHz  
td(on)  
5
-
ns ID=100mA, VDD 25V  
ns VGS=4.5V  
ns RL=250  
ns RG=10  
*
tr  
8
-
*
*
*
Turn-off delay time  
Fall time  
td(off)  
tf  
17  
43  
-
-
*Pulsed  
Body diode characteristics (Source-Drain) (Ta = 25C)  
Parameter  
Forward Voltage  
Symbol  
Min.  
-
Typ.  
-
Max. Unit  
1.2  
Conditions  
*
VSD  
V
Is=200mA, VGS=0V  
*Pulsed  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2/5  
2011.04 - Rev.A  
Data Sheet  
RYU002N05  
Electrical characteristics curves  
0.2  
0.2  
0.15  
0.1  
1
0.1  
VDS= 10V  
Pulsed  
VGS= 4.5V  
VGS= 2.5V  
VGS= 1.5V  
VGS= 1.2V  
0.15  
VGS= 4.5V  
Ta= 125C  
Ta= 75C  
Ta= 25C  
Ta= 25C  
VGS= 2.5V  
VGS= 0.9V  
VGS= 1.5V  
0.1  
VGS= 0.9V  
VGS= 0.8V  
VGS= 1.2V  
Ta=25C  
Pulsed  
VGS= 0.8V  
0.01  
0.001  
Ta=25C  
Pulsed  
0.05  
0
0.05  
0
VGS= 0.7V  
8 10  
VGS= 0.7V  
0.8  
0
0.2  
0.4  
0.6  
0.8  
1
0
0.2  
0.4  
0.6  
1
0
2
4
6
DRAIN-SOURCE VOLTAGE : VDS[V]  
Fig.2 Typical Output Characteristics( )  
DRAIN-SOURCE VOLTAGE : VDS[V]  
GATE-SOURCE VOLTAGE : VGS[V]  
Fig.1 Typical Output Characteristics( )  
Fig.3 Typical Transfer Characteristics  
10000  
1000  
100  
10000  
10000  
1000  
100  
VGS= 4.5V  
Pulsed  
Ta= 25C  
Pulsed  
VGS= 2.5V  
Pulsed  
1000  
100  
VGS= 0.9V  
VGS= 1.2V  
VGS= 1.5V  
VGS= 2.5V  
VGS= 4.5V  
Ta= 125C  
Ta= 75C  
Ta= 25C  
Ta= 25C  
Ta= 125C  
Ta= 75C  
Ta= 25C  
Ta= 25C  
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
DRAIN-CURRENT : ID[A]  
DRAIN-CURRENT : ID[A]  
DRAIN-CURRENT : ID[A]  
Fig.4 Static Drain-Source On-State  
Resistance vs. Drain Current()  
Fig.5 Static Drain-Source On-State  
Resistance vs. Drain Current()  
Fig.6 Static Drain-Source On-State  
Resistance vs. Drain Current()  
10000  
1000  
100  
10000  
1000  
100  
10000  
1000  
100  
VGS= 0.9V  
Pulsed  
VGS= 1.2V  
Pulsed  
VGS= 1.5V  
Pulsed  
Ta= 125C  
Ta= 75C  
Ta= 25C  
Ta= 25C  
Ta= 125C  
Ta= 75C  
Ta= 25C  
Ta= 25C  
Ta= 125C  
Ta= 75C  
Ta= 25C  
Ta= 25C  
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
DRAIN-CURRENT : ID[A]  
Fig.8 Static Drain-Source On-State  
DRAIN-CURRENT : ID[A]  
Fig.9 Static Drain-Source On-State  
Resistance vs. Drain Current()  
DRAIN-CURRENT : ID[A]  
Fig.7 Static Drain-Source On-State  
Resistance vs. Drain Current()  
Resistance vs. Drain Current()  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
3/5  
2011.04 - Rev.A  
Data Sheet  
RYU002N05  
10  
1
5000  
4000  
3000  
2000  
1000  
0
VDS= 10V  
Ta=25C  
Pulsed  
VGS=0V  
Pulsed  
Pulsed  
ID= 0.01A  
ID= 0.20A  
1
0.1  
Ta= 125C  
Ta= 75C  
Ta= 25C  
Ta= 25C  
Ta=25C  
Ta=25C  
Ta=75C  
Ta=125C  
0.1  
0.01  
0.01  
0.1  
DRAIN-CURRENT : ID[A]  
1
0
0.5  
1
1.5  
0
1
2
3
4
5
6
7
8
SOURCE-DRAIN VOLTAGE : VSD [V]  
GATE-SOURCE VOLTAGE : VGS[V]  
Fig.12 Static Drain-Source On-State  
Fig.10 Forward Transfer Admittance  
vs. Drain Current  
Fig.11 Reverse Drain Current  
vs. Sourse-Drain Voltage  
Resistance vs. Gate Source Voltage  
1000  
100  
10  
1000  
Ta=25C  
VDD=25V  
Ta=25C  
f=1MHz  
4
td(off)  
tf  
VGS=4.5V  
VGS=0V  
RG=10  
3
2
1
0
100  
10  
1
Ciss  
Ta=25C  
VDD=25V  
ID= 0.2A  
RG=10  
Pulsed  
Crss  
Coss  
td(on)  
tr  
0.1  
1
0.01  
0.1  
1
10  
100  
0.01  
1
0
0.5  
1
1.5  
DRAIN-CURRENT : ID[A]  
Fig.13 Switching Characteristics  
TOTAL GATE CHARGE : Qg [nC]  
DRAIN-SOURCE VOLTAGE : VDS[V]  
Fig.14 Typical Capacitance  
vs. Drain-Source Voltage  
Fig.15 Typical Capacitance  
vs. Drain-Source Voltage  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
4/5  
2011.04 - Rev.A  
Data Sheet  
RYU002N05  
Measurement circuits  
Pulse width  
90%  
VGS  
ID  
VDS  
50%  
10%  
50%  
V
GS  
DS  
R
L
V
10%  
10%  
90%  
D.U.T.  
V
DD  
RG  
90%  
t
d(on)  
td(off)  
t
r
tf  
t
on  
toff  
Fig.1-2Switching Waveforms  
Fig.1-1 Switching Time Measurement Circuit  
Notice  
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design  
ESD protection circuit.  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
5/5  
2011.04 - Rev.A  
Notice  
N o t e s  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
R1120A  
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