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VUB60-16NO1

型号：

VUB60-16NO1

描述：

三相整流桥IGBT ，快恢复二极管的制动系统[ Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

113 K

下载PDF手册
VUB 60  
VRRM = 1200-1600 V  
IdAVM = 70 A  
Three Phase Rectifier Bridge  
with IGBT and Fast Recovery Diode  
for Braking System  
5
4
2
1
VRRM  
Type  
V
1200  
1600  
VUB 60-12 NO1  
VUB 60-16 NO1  
10  
9
7
6
Symbol  
Test Conditions  
Maximum Ratings  
VRRM  
IdAV  
IdAVM  
1200 / 1600  
V
A
A
Features  
TH = 110°C, sinusoidal 120°  
limited by leads  
59  
70  
●
Soldering connections for PCB  
mounting  
●
●
●
●
●
Isolation voltage 3600 V~  
Ultrafast freewheel diode  
Convenient package outline  
UL registered E 72873  
Thermistor  
IFSM  
I2t  
TVJ = 45°C,t = 10 ms, VR = 0 V  
TVJ = 150°C,t = 10 ms, VR = 0 V  
530  
475  
A
A
TVJ = 45°C,t = 10 ms, VR = 0 V  
TVJ = 150°C,t = 10 ms, VR = 0V  
1400  
1130  
A
A
Ptot  
-
TH = 80°C per diode  
49  
W
Applications  
VCES  
VGE  
TVJ = 25°C to 150°C  
Continuous  
1200  
± 20  
V
V
●
Drive Inverters with brake system  
IC25  
IC70  
IC80  
TH = 25°C, DC  
TH = 70°C, DC  
TH = 80°C, DC  
31  
23  
21  
A
A
A
Advantages  
●
2 functions in one package  
No external isolation  
Easy to mount with two screws  
Suitable for wave soldering  
●
ICM  
tp = Pulse width limited by TVJM  
62  
70  
A
●
●
Ptot  
TH = 80°C  
W
●
High temperature and power cycling  
capability  
VRRM  
IFAV  
IFRMS  
IFRM  
1200  
8
V
A
A
A
TH = 80°C, rectangular d = 0.5  
TH = 80°C, rectangular d = 0.5  
TH = 80°C, tP = 10 µs, f = 5 kHz  
Dimensions in mm (1 mm = 0.0394")  
12  
90  
IFSM  
TVJ = 45°C, t = 10 ms  
TVJ = 150°C,t = 10 ms  
75  
60  
A
A
Ptot  
TH = 80°C  
22  
W
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Md  
Mounting torque  
typ.  
(M5)  
(10-32 unf)  
2-2.5  
18-22  
35  
Nm  
lb.in.  
g
Weight  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 4  
VUB 60  
80  
Symbol  
Test Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
A
70  
min.  
typ. max.  
typ.  
60  
50  
40  
30  
20  
10  
0
IR  
VR = VRRM  
VR = VRRM  
,
,
TVJ = 25°C  
TVJ = 150°C  
0.1 mA  
IF  
TVJ= 25 C  
TVJ=150°C  
3
1.3  
mA  
V
VF  
IF = 25 A,  
TVJ = 25°C  
max.  
VT0  
rT  
For power-loss calculations only  
TVJ = 150°C  
0.85  
V
8.5 mW  
RthJH  
per diode  
1.42 K/W  
VBR(CES)  
VGE(th)  
VGS = 0 V, IC = 3 mA  
IC = 10 mA  
1200  
5
V
0.0  
0.5  
1.0  
1.5  
2.0  
V
7.5  
V
VF  
Fig. 1 Forward current versus voltage  
drop per rectifier diode  
IGES  
ICES  
VGE = ± 20 V  
500 nA  
TVJ = 25°C, VCE = 800 V  
TVJ = 125°C, VCE = 800 V  
250 mA  
1
mA  
500  
VR= 0.8VRRM  
A
VCEsat  
VGE = 15 V, IC = 25 A  
3.5  
V
400  
IFSM  
tSC  
(SCSOA)  
VGE = 15 V, VCE = 600 V, TVJ = 125°C,  
RG = 4.7 W, non repetitive  
10 ms  
300  
RBSOA  
Cies  
VGE = 15 V, VCE = 800 V, TVJ = 125°C,  
RG = 4.7 W, Clamped Inductive load, L = 100 mH  
50  
A
TVJ= 45 C  
200  
VCE = 25 V, f = 1 MHz, VGE = 0 V  
2.85  
nF  
TVJ= 150 C  
100  
td(on)  
td(off)  
tfi  
Eon  
Eoff  
100  
220  
1600  
3.5  
ns  
ns  
ns  
mJ  
mJ  
VCE = 600 V, IC = 25 A  
V
GE = 15 V, RG = 4.7 W  
Inductive load; L = 100 mH  
VJ = 125°C  
0
0.001  
0.01  
0.1  
1
s
T
t
12  
Fig. 2 Surge overload current per  
rectifier diode  
RthJH  
IR  
1 K/W  
VR = VRRM  
,
TVJ = 25°C  
0.2 mA  
VR = 800 V, TVJ =150°C  
6
mA  
10000  
VR= 0 V  
VF  
IF  
= 12 A, TVJ = 25°C  
2.7  
V
A2s  
VT0  
rT  
For power-loss calculations only  
TVJ = 150°C  
1.65  
46 mW  
V
1000  
TVJ= 45 C  
I2t  
IRM  
IF  
= 25 A, -diF/dt = 100 A/ms  
6.5  
50  
7
A
TVJ= 150 C  
VR = 100 V  
100  
10  
trr  
IF  
= 1 A,  
-diF/dt = 100 A/ms  
70 ns  
VR = 30 V  
RthJH  
R25  
3.12 K/W  
Siemens Typ S 891/2,2k/+9  
2.2 kW  
1
ms  
10  
t
dS  
dA  
a
Creep distance on surface  
Strike distance in air  
Maximum allowable acceleration  
12.7 mm  
9.4 mm  
50 m/s2  
Fig. 3 I2t versus time per rectifier diode  
© 2000 IXYS All rights reserved  
2 - 4  
VUB 60  
140  
80  
A
70  
W
120  
RthHA [K/W]  
60  
Id(AV)M  
0.5  
1
100  
Ptot  
50  
40  
30  
20  
10  
0
1.5  
2
3
4
6
80  
60  
40  
20  
0
0
10  
20  
30  
40  
50  
60  
0
40  
80  
120  
160  
0
40  
80  
120  
160  
A
°C  
°C  
TH  
TA  
Id(AV)M  
Fig. 4 Power dissipation versus direct output current and ambient temperature  
(Rectifier bridge)  
Fig. 5 Maximum forward current  
versus heatsink temperature  
(Rectifier bridge)  
100  
A
1.4  
VCE(sat)  
1.3  
2.0  
Eoff  
TVJ=125 C  
RG = 4.7  
TVJ = 25°C  
VGE = 15V  
IC = 50A  
tfi  
80  
1.2  
1.5  
Eoff  
IC  
norm.  
norm.  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
60  
40  
20  
0
VGE = 13V  
IC = 25A  
1.0  
0.5  
0.0  
tfi  
VGE = 11V  
VGE = 9V  
IC = 12.5A  
VGE = 15V  
-50 -25  
C
0
2
4
6
8
10 12 14  
V
0
25 50 75 100 125
0
10  
20  
30  
IC  
40  
50  
A
TVJ  
VCE  
Fig. 6 Output characteristics for  
braking (IGBT)  
Fig. 7 Saturation voltage versus  
junction temperature  
Fig. 8 Turn-off energy per pulse and  
fall time versus collector  
normalized (IGBT)  
current, normalized (IGBT)  
70  
A
60  
1.3  
TVJ=125 C  
Eoff  
IC = 25A  
tfi  
D=0.1  
D=0.2  
norm. to 4.7  
1.2  
50  
D=0.3  
IC  
norm.  
Eoff  
D=0.4  
40  
D=0.5  
1.1  
1.0  
0.9  
30  
D=0.7  
tfi  
20  
10  
TH = 80 C  
0
0
20  
40  
60  
80  
100  
0.0001  
0.001  
0.01  
0.1  
1
s
10  
RG  
tp  
Fig. 9 Collector current versus pulse width and duty cycle (IGBT)  
Fig.10 Turn-off energy per pulse and  
fall time versus RG (IGBT)  
© 2000 IXYS All rights reserved  
3 - 4  
VUB 60  
100  
A
40  
A
35  
3.0  
C
T
VJ=100 C  
VR= 540 V  
2.5  
Qrr  
30  
25  
20  
15  
10  
5
IF  
IF = 11 A  
IF = 22 A  
IF = 11 A  
IF = 5.5 A  
IC  
10  
1
2.0  
1.5  
1.0  
0.5  
0.0  
TVJ=150 C  
max.  
TVJ=25 C  
T
VJ=125 C  
typ.  
RG=4.7  
0
0.1  
0
1
2
3
4
0
400  
800  
VCE  
1200  
1
10  
100  
1000  
A/ s  
V
V
-diF/dt  
VF  
Fig.11 Reverse biased safe operation  
area (IGBT)  
Fig. 12 Forward current versus  
voltage drop (Fast Diode)  
Fig. 13 Recovery charge versus  
-diF/dt (Fast Diode)  
100  
5
4
3
2
1
0
1.0  
s
30  
T
VJ=100 C  
T
VJ=100 C  
A
s
V
VR= 540 V  
VR= 540 V  
VFR  
25  
80  
0.8  
max.  
IF = 11 A  
IF = 22 A  
IF = 11 A  
IF = 5.5 A  
trr  
VFR  
60  
20  
15  
10  
5
max.  
IRM  
0.6  
0.4  
0.2  
0  
IF = 11 A  
IF = 22 A  
IF = 11 A  
IF = 5.5 A  
TVJ=125 C  
IF =11A  
40  
20  
0
typ.  
300  
tFR  
tFR  
typ.  
0
0
100  
200  
300  
A/s 500  
0
100  
200  
-diF/dt  
300  
400  
0
100  
200  
-diF/dt  
400  
A/ s  
A/ s  
-diF/dt  
Fig.14 Peak forward voltage and  
recovery time versus -diF/dt  
(Fast Diode)  
Fig.15 Recovery time versus -diF/dt  
(Fast Diode)  
Fig.16 Peak reverse current versus  
-diF/dt (Fast Diode)  
1.4  
1.2  
1.0  
3.5  
Fast Diode  
K/W  
3.0  
2.5  
ZthJH  
IRM  
Kf  
0.8  
0.6  
0.4  
0.2  
0.0  
2.0  
1.5  
1.0  
0.5  
0.0  
per Rectifier  
Diode  
QR  
IGBT  
°C  
160  
0.001  
0.01  
0.1  
1
10  
s
100  
0
40  
80  
TVJ  
120  
t
Fig.17 Dynamic parameters versus  
Fig.18 Transient thermal impedance junction to heatsink ZthJH  
junction temperature (Fast Diode)  
© 2000 IXYS All rights reserved  
4 - 4  
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