JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diode
BZX84C2V4 - BZX84C51
SOT-23
Min
Dim
A
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
A
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
B
C
Features
B
C
D
·
·
·
·
Planar Die Construction
E
TOP VIEW
350mW Power Dissipation
G
H
D
G
E
Zener Voltages from 2.4V - 51V
Ideally Suited for Automated Assembly
Processes
H
J
K
M
K
L
J
M
L
MAKING see table on page 2 the first code
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Symbol
Maximum Ratings
Characteristic
Value
0.9
Unit
V
Forward Voltage
@ IF = 10mA
VF
Pd
Power Dissipation (Note 1)
350
mW
K/W
°C
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
357
-65 to +150
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300ms pulse width, period = 5ms.
3. f = 1KHz.
DS18001 Rev. P-2
1 of 3
BZX84C2V4 - BZX84C51
